Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

Wen Zheng-Xin^{1, 2}, Zhang Feng^{1, 2, 3, †}, Shen Zhan-Wei¹, Chen Jun^{1, 2}, He Ya-Wei^{1, 2}, Yan Guo-Guo¹, Liu Xing-Fang¹, Zhao Wan-Shun¹, Wang Lei¹, Sun Guo-Sheng^{1, 2}, Zeng Yi-Ping^{1, 2}

On-state characteristics of the 4H–SiC p-channel IGBT with (a) I-cell and (b) H-cell.