Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
Wen Zheng-Xin
1, 2
, Zhang Feng
1, 2, 3, †
, Shen Zhan-Wei
1
, Chen Jun
1, 2
, He Ya-Wei
1, 2
, Yan Guo-Guo
1
, Liu Xing-Fang
1
, Zhao Wan-Shun
1
, Wang Lei
1
, Sun Guo-Sheng
1, 2
, Zeng Yi-Ping
1, 2
Room temperature blocking characteristic of the H-cell 4H–SiC p-channel IGBTs.