Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
Wen Zheng-Xin1, 2, Zhang Feng1, 2, 3, †, Shen Zhan-Wei1, Chen Jun1, 2, He Ya-Wei1, 2, Yan Guo-Guo1, Liu Xing-Fang1, Zhao Wan-Shun1, Wang Lei1, Sun Guo-Sheng1, 2, Zeng Yi-Ping1, 2
       

(a) Schematic cross-section of a single unit cell of SiC IGBT.