Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD
Profile of recombination rate in HBT with buffer layer 100 ps after ion has struck at P2.
Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD |
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Profile of recombination rate in HBT with buffer layer 100 ps after ion has struck at P2. |
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