Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD
Plot of recombination rate at 100-ps depth at P1 for conventional and buffer layer device.
Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD |
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Plot of recombination rate at 100-ps depth at P1 for conventional and buffer layer device. |
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