Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates
Ji Xue
1, 2
, Dong Wen-Xiu
2
, Zhang Yu-Min
1, 2
, Wang Jian-Feng
2
, Xu Ke
2, 3, †
The change in resonant frequency with temperature of SAWRs based on GaN film and bulk GaN.