Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates
Ji Xue1, 2, Dong Wen-Xiu2, Zhang Yu-Min1, 2, Wang Jian-Feng2, Xu Ke2, 3, †
       

(a) Frequency response of two SAW one-port resonators, both acoustic waves propagate along the [11 2 ¯ 0]. (b) Admittance of one-port SAW resonator on GaN film, and the acoustic waves propagates along the [11 2 ¯ 0].