Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates
Ji Xue1, 2, Dong Wen-Xiu2, Zhang Yu-Min1, 2, Wang Jian-Feng2, Xu Ke2, 3, †
       

(a) Orientations of SAWRs on GaN wafer. For resonators in direction A, acoustic waves propagate along [11 2 ¯ 0] direction. While in direction B, acoustic waves propagate along [1 1 ¯ 00] direction. (b) Admittance of SAWs propagating along [11 2 ¯ 0] direction. (c) Admittance of SAWs propagating along [1 1 ¯ 00] direction.