Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates
Ji Xue1, 2, Dong Wen-Xiu2, Zhang Yu-Min1, 2, Wang Jian-Feng2, Xu Ke2, 3, †
       

(a) Surface property of bulk GaN by AFM in a range of 10 μ m × 10 μ m , (b) AFM image of GaN film in a range of 10 μ m × 10 μ m .