Sun Rui-Jin1, 2, Jin Shi-Feng1, 3, †, Deng Jun1, 2, Hao Mu-Nan1, 2, Zhao Lin-Lin1, 2, Fan Xiao1, 2, Sun Xiao-Ning1, 2, Guo Jian-Gang1, 2, Gu Lin1, 2, ‡
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Hall effect transverse resistivity
ρ
xy
measurement. (a)–(c) Field-dependent Hall effect transverse resistivity
ρ
xy
for Lix(C3H0N2)yFe2Se2 (x = 0.15, 0.25, 0.4) samples. (d) Temperature-dependent Hall coefficient for three samples, RH changes sign from negative to positive at a similar point about 185 K, demonstrating dominant hole carriers appear above 185 K.
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