Method of evaluating interface traps in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN high electron mobility transistors

Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors

Bao Si-Qin-Gao-Wa^{1, 2, 3}, Ma Xiao-Hua^{1, 2, †}, Chen Wei-Wei⁴, Yang Ling^{1, 2}, Hou Bin^{1, 2}, Zhu Qing^{1, 2}, Zhu Jie-Jie^{1, 2}, Hao Yue²

Plots of parallel conductance versus radial frequency at selected gate bias V_g ranging (a) from 3.0 V to 5.0 V in steps of 0.2 V and (b) from −3.4 V to −2.7 V in steps of 0.1 V. Solid line curves are fitting curves to experimental data.