Method of evaluating interface traps in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN high electron mobility transistors

Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors

Bao Si-Qin-Gao-Wa^{1, 2, 3}, Ma Xiao-Hua^{1, 2, †}, Chen Wei-Wei⁴, Yang Ling^{1, 2}, Hou Bin^{1, 2}, Zhu Qing^{1, 2}, Zhu Jie-Jie^{1, 2}, Hao Yue²

Typical C_m–V and G_m–V characteristics of the Al₂O₃/AlGaN/GaN HEMTs at given frequencies from 50 kHz to 1 MHz.