Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
Bao Si-Qin-Gao-Wa1, 2, 3, Ma Xiao-Hua1, 2, †, Chen Wei-Wei4, Yang Ling1, 2, Hou Bin1, 2, Zhu Qing1, 2, Zhu Jie-Jie1, 2, Hao Yue2
       

(a) Cross-section and (b) Schottky characteristics of the fabricated Al2O3/AlGaN/GaN HEMT.