Method of evaluating interface traps in Al
2
O
3
/AlGaN/GaN high electron mobility transistors
Bao Si-Qin-Gao-Wa
1, 2, 3
, Ma Xiao-Hua
1, 2, †
, Chen Wei-Wei
4
, Yang Ling
1, 2
, Hou Bin
1, 2
, Zhu Qing
1, 2
, Zhu Jie-Jie
1, 2
, Hao Yue
2
(a) Cross-section and (b) Schottky characteristics of the fabricated Al
2
O
3
/AlGaN/GaN HEMT.