Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons
Liu Yan1, 2, Chen Wei2, †, He Chaohui1, Su Chunlei2, Wang Chenhui2, Jin Xiaoming2, Li Junlin2, Xue Yuanyuan2
       

Cross-sectional view and parasitic structure schematic diagram of the lateral PNP transistor: (a) cross-sectional view of the lateral PNP transistor, (b) two parasitic transistor in LPNP, and (c) reverse biased collector.