Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

Liu Yan^{1, 2}, Chen Wei^{2, †}, He Chaohui¹, Su Chunlei², Wang Chenhui², Jin Xiaoming², Li Junlin², Xue Yuanyuan²

Δ h FE − 1 ( Φ ) versus neutron fluence Φfor LPNP, SPNP, and VNPN bipolar transistors irradiated by CSNS.