Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

Liu Yan^{1, 2}, Chen Wei^{2, †}, He Chaohui¹, Su Chunlei², Wang Chenhui², Jin Xiaoming², Li Junlin², Xue Yuanyuan²

Experimental base current versus gate bias on GCLPNP irradiated by different level total ionizing dose.