Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

Dou Ya-Mei^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Zhao Xiao-Song^{1, 2}, Zhang Xiao-Di^{1, 2}, Wu Xin-Yu^{1, 2}, Yang Fu-Hua^{1, 2, 3}

The temperature-dependent effective mobilities of the impurity band and the conduction subbands. The inset is the diagram of the energy band.