Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

Dou Ya-Mei^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Zhao Xiao-Song^{1, 2}, Zhang Xiao-Di^{1, 2}, Wu Xin-Yu^{1, 2}, Yang Fu-Hua^{1, 2, 3}

(a) The conductance G varies with the gate voltage V_g in V_ds=10 mV at different temperatures. The curves are successively shifted in the conductance for clarity. (b) The transconductance g_m versus the gate voltage V_g and the transfer characteristic curve I_ds–V_g in V_ds=3 mV–10 mV at the temperature of 30 K.