Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

Dou Ya-Mei^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Zhao Xiao-Song^{1, 2}, Zhang Xiao-Di^{1, 2}, Wu Xin-Yu^{1, 2}, Yang Fu-Hua^{1, 2, 3}

Drain current I_dsversus gate voltage V_g with bias V_ds=10 mV at different temperatures.