Nonlocal effect on resonant radiation force exerted on semiconductor coupled quantum well nanostructures

Zhang Jin-Ke^{1, 2}, Zhang Ting-Ting^{1, 2}, Zhang Yu-Liang^{1, 2}, Wang Guang-Hui^{1, 2, †}, Deng Dong-Mei^{1, 2}

Maximum resonant radiation force (F_x and F_z) versus the incident angle θ in the two cases of p-polarization [(a) and (b)], and s-polarization [(c) and (d)] for three different well-width ratios, respectively, with the left well width L_L=5 nm, and the barrier height V₁=V₂=2.0 meV, ℏ Γ 0 = 4.7 meV .