Nonlocal effect on resonant radiation force exerted on semiconductor coupled quantum well nanostructures

Zhang Jin-Ke^{1, 2}, Zhang Ting-Ting^{1, 2}, Zhang Yu-Liang^{1, 2}, Wang Guang-Hui^{1, 2, †}, Deng Dong-Mei^{1, 2}

The change of maximum resonant radiation force (F_x and F_z) versus the barrier height ratio V₁/V₂ for three different well width ratios: L_R/L_L=2.5/5, 5/5, 7.5/5 in the two cases of p-polarization [(a) and (b)] and s-polarization [(c) and (d)], respectively, with the left well width L_L=5 nm, and the outer barrier height V₂=2.0 meV, ℏ Γ 0 = 4.7 meV .