Nonlocal effect on resonant radiation force exerted on semiconductor coupled quantum well nanostructures

Zhang Jin-Ke^{1, 2}, Zhang Ting-Ting^{1, 2}, Zhang Yu-Liang^{1, 2}, Wang Guang-Hui^{1, 2, †}, Deng Dong-Mei^{1, 2}

Resonant radiation force spectra (F_x dashed lines; F_z solid lines) in the two cases of p- and s-polarization for two different width ratios: L_R/L_L=2.5/5 (black lines), L_R/L_L=7.5/5 (red lines) [panels (a) and (b)], and for the three different CQWN widths: L_R=L_L=3 nm (black lines), L_R=L_L=5 nm (red lines), and L_R=L_L=7 nm (blue lines) [panels (c) and (d)]. The mid-barrier width L_B=1 nm, and the barrier height V₁=V₂=2.0 meV, ℏ Γ 0 = 4.7 meV .