Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Yan Jing-Yuan^{1, 2}, Wang Yong-Wei^{1, 2}, Guo Yong-Ming^{1, 2}, Zhang Wei², Wang Cong², An Bao-Li^{1, †}, Liu Dong-Fang^{2, ‡}

Panorama of initial epi-Si for hollow-spaced continuous Si film. (a) Bird-view SEM image of epi-Si grown for 30 min, (b) cross-sectional SEM image of epi-Si grown for 30 min, (c) bird-view SEM image of epi-Si grown for 1 h, (d) cross-sectional SEM image of epi-Si grown for 1 h, (e) bird-view SEM image of epi-Si grown for 2 h. and (f) cross-sectional SEM image of epi-Si grown for 2 h.