Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Yan Jing-Yuan^{1, 2}, Wang Yong-Wei^{1, 2}, Guo Yong-Ming^{1, 2}, Zhang Wei², Wang Cong², An Bao-Li^{1, †}, Liu Dong-Fang^{2, ‡}

Schematic diagram of (a) gas flow on seed area and V-grooves, (b) gas flow on epi-Si and V-shaped grooves, (c) morphology of epi-Si under equilibrium growth without lateral overgrowth on oxide layers, and (d) morphology of epi-Si under equilibrium growth with lateral overgrowth.