Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Yan Jing-Yuan^{1, 2}, Wang Yong-Wei^{1, 2}, Guo Yong-Ming^{1, 2}, Zhang Wei², Wang Cong², An Bao-Li^{1, †}, Liu Dong-Fang^{2, ‡}

Cross-sectional SEM images of the epi-Si under different SiCl₄ feeding modes: (a) uninterrupted 24-sccm SiCl₄ feeding for 30 min; (b) intermittent 24-sccm SiCl₄ feeding for 30 min (3-min turn-on/3-min turn-off); (c) intermittent 24-sccm SiCl₄ feeding for 30-min (1-min on followed by 2-min off); (d) intermittent 12-sccm SiCl₄ feeding for 60 min (1-min on followed by 2-min off).