Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology
Yan Jing-Yuan1, 2, Wang Yong-Wei1, 2, Guo Yong-Ming1, 2, Zhang Wei2, Wang Cong2, An Bao-Li1, †, Liu Dong-Fang2, ‡
       

SEM images of the grooved substrate, (a) bird view, and (b) cross-section; showing up images of seeded sites by diluted KOH etching, (c) zoom-in, and (d) zoom-out; cross-sectional SEM image and EDS spectrum of single wedged strip, (e) as-prepared by wet-etching under the mask of SiNx, and (f) after thermal oxidization and removal of the left SiNx mask layers.