Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Yan Jing-Yuan^{1, 2}, Wang Yong-Wei^{1, 2}, Guo Yong-Ming^{1, 2}, Zhang Wei², Wang Cong², An Bao-Li^{1, †}, Liu Dong-Fang^{2, ‡}

Fabrication process of grooved seed Si substrate: (a) SiN_x deposition, (b) photoresist spin-coating, (c) photolithography, (d) RIE etching of SiN_x, (e) photoresist lift-off, (f) silicon wet etching, (g) oxidization, and (h) removal of the left SiN_x mask.