Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
Liu Kang1, Zhao Jiwen2, Sun Huarui1, ‡, Guo Huaixin3, Dai Bing2, Zhu Jiaqi2
       

(a) and (b) SEM images of the polycrystalline diamond grown on GaN. (c) SAXD spectrum taken from the diamond-on-GaN sample. (d) UV thermoreflectance transients taken from the GaN (black) and diamond (red) sides.