Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
Liu Kang1, Zhao Jiwen2, Sun Huarui1, ‡, Guo Huaixin3, Dai Bing2, Zhu Jiaqi2
       

(a) Schematic diagram of the UV TTR experimental setup. (b) The GaN heterostructures tested in the measurement, and the heating and probing schemes used in TTR for GaN-on-SiC, GaN-on-Si, and diamond-on-GaN.