Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

Wang Zhi-Gang^†, Liao Tao, Wang Ya-Nan

Optimized BV_opt of trench MOSFET1: (a) optimized BV_opt versus doping concentration of drift region N d , opt , and (b) optimized BV_opt versus trench width W_t.