Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

Wang Zhi-Gang^†, Liao Tao, Wang Ya-Nan

The potential distribution of trench MOSFET1 with various doping concentrations for the drift region based on the analytical model and the simulation results.