Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation
Wang Zhi-Gang †, Liao Tao, Wang Ya-Nan
       

The electric field distribution along A–B–C–D at low-k material in trench MOSFET1 with kr = 1, 1.8, and 2.5. (The doping concentration of N/P pillar is N p i = 3.5 × 10 16 cm − 3 , N n i = 5 × 10 15 cm − 3 ; the width of the dielectric trench is W t = 4.8 μ m , and the depth is L = 4.8 μ m .)