Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer
Li Guang1, Wang Lin-Yuan1, Song Wei-Dong1, Jiang Jian1, Luo Xing-Jun1, Guo Jia-Qi1, He Long-Fei1, 2, Zhang Kang2, Wu Qi-Bao3, Li Shu-Ti1, ‡
       

Simulated distributions of (a) electron and (b) hole concentrations nearby MQWs of the three samples at 180 mA.