Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

Li Guang¹, Wang Lin-Yuan¹, Song Wei-Dong¹, Jiang Jian¹, Luo Xing-Jun¹, Guo Jia-Qi¹, He Long-Fei^{1, 2}, Zhang Kang², Wu Qi-Bao³, Li Shu-Ti^{1, ‡}

Schematic diagram of UV LED structures with linearly graded AlGaN inserting layer in EBL.