Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

Tian Zhi-Feng^{1, 2, 3, 5}, Xu Peng^{1, 4}, Yu Yao^{1, 5}, Sun Jian-Dong^{1, †}, Feng Wei^{1, 6}, Ding Qing-Feng^{1, 2}, Meng Zhan-Wei^{1, 4}, Li Xiang^{1, 6}, Cai Jin-Hua¹, Zheng Zhong-Xin⁷, Li Xin-Xing¹, Jin Lin¹, Qin Hua^{1, 2, 5, ‡}, Sun Yun-Fei⁸

(a) The extracted electron density and electron mobility as a function of temperature from 300 K to 473 K without gate bias. (b) The optimal gate voltages as a function of temperature.