Two-step growth of VSe2 films and their photoelectric properties
Zeng Yu1, Zhang Shengli1, Li Xiuling1, Ao Jianping1, Sun Yun1, Liu Wei1, Liu Fangfang1, Gao Peng2, Zhang Yi1, †
       

XRD patterns of the V films selenized at (a) 350 °C, (b) 400 °C, (c) 450 °C, and (d) 500 °C, the inset shows the corresponding SEM images of the films.