Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer

An Xuee¹, Shang Zhengjun¹, Ma Chuanhe¹, Zheng Xinhe², Zhang Cuiling³, Sun Lin¹, Yue Fangyu¹, Li Bo^{1, †}, Chen Ye^1,

(a) Time-resolved PL of InGaN film measured by TCSPC at different temperatures. The IRF curve is also plotted. The dashed line represents the lifetime and the dash line represents the rise time of SE. (b) The transient differential reflectivity Δ R / R and TRPL of InGaN film measured at 300 K.