Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer

An Xuee¹, Shang Zhengjun¹, Ma Chuanhe¹, Zheng Xinhe², Zhang Cuiling³, Sun Lin¹, Yue Fangyu¹, Li Bo^{1, †}, Chen Ye^1,

(a) The peak energies of SE and SPE as a function of temperature. The dot line shows the Varshini bandgap shrinkage of InGaN from ^[28]. (b) and (c) PL intensities of the three peaks as a function of temperature under excitation densities of 5.6 μ J / cm 2 and 17.7 μ J / cm 2 , respectively.