Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer

An Xuee¹, Shang Zhengjun¹, Ma Chuanhe¹, Zheng Xinhe², Zhang Cuiling³, Sun Lin¹, Yue Fangyu¹, Li Bo^{1, †}, Chen Ye^1,

PL spectra of InGaN film under different excitation densities at low temperature 4 K. Inset (i) shows the PL intensity of SE peak as a function of excitation density. Inset (ii) shows the PL spectra under different excitation densities at 300 K.