Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)<sub>2</sub>As<sub>2</sub>

Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂

Peng Y^{1, 2}, Yu S^{2, 3}, Zhao G Q^{2, 3}, Li W M^{2, 3}, Zhao J F^{2, 3}, Cao L P², Wang X C^{2, 3}, Liu Q Q^{2, 3}, Zhang S J^{2, 3}, Yu R Z^{2, 3}, Deng Z^{2, 3, †}, Zhu X H^{1, ‡}, Jin C Q^{2, 3, 4, §}

(Ba_0.7K_0.3)(Zn_0.85Mn_0.15)₂(As_1−yPn_y)₂ (Pn = Sb, As, and P; y = 0.1) samples’ field dependent Hall resistivity at (a) 2 K, (b) 50 K, and (c) 100 K.