Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2
Peng Y1, 2, Yu S2, 3, Zhao G Q2, 3, Li W M2, 3, Zhao J F2, 3, Cao L P2, Wang X C2, 3, Liu Q Q2, 3, Zhang S J2, 3, Yu R Z2, 3, Deng Z2, 3, †, Zhu X H1, ‡, Jin C Q2, 3, 4, §
       

The temperature dependent magnetization of (a) (Ba0.7K0.3)(Zn0.85Mn0.15)2(As1−yPny)2 (Pn = Sb and P; y = 0.1 and 0.2) and (b) (Ba0.9K0.1)(Zn0.85Mn0.15)2(As1−yPny)2 (y = 0.1 and 0.2 for Pn = Sb; y = 0.1 for Pn = P). The inset is the Curie–Weiss fit of (Ba0.7K0.3)(Zn0.85Mn0.15)2(As0.8Pn0.2)2 (c) Curie temperature and paramagnetic temperature of the samples in panel (a). (d) Field dependent magnetization of the samples in panel (a) at 2 K.