Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2
Peng Y1, 2, Yu S2, 3, Zhao G Q2, 3, Li W M2, 3, Zhao J F2, 3, Cao L P2, Wang X C2, 3, Liu Q Q2, 3, Zhang S J2, 3, Yu R Z2, 3, Deng Z2, 3, †, Zhu X H1, ‡, Jin C Q2, 3, 4, §
       

(a) The crystal structure of (Ba,K)(Zn,Mn)2(As1−yPny)2. (b) PXRD patterns of (Ba0.7K0.3)(Zn0.85Mn0.15)2(As1−yPny)2 (Pn = Sb and P; y = 0.1 and 0.2). The mark star stands for antiferromagnetic impurity MnAs, the solid diamond for nonmagnetic As, and the open diamond for nonmagnetic Zn3As2. (c) Lattice constants and cell volumes of the samples in panel (b).