Effects of interface bound states on the shot noise in normal metal–low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential
Chen Wen-Xiang, Wang Rui-Qiang, Hu Liang-Bin †
       

The ratio of the zero-bias differential shot noise S0 to the zero-bias differential conductivity G0 in a 1D tunnel junction (a) and in a 2D tunnel junction (b) as a function of the strength of the Zeeman magnetic field for several different values of the interface barrier strength Z0. The other parameters are Δ / μ s = 0.001 and α = 0.2 .