Effects of interface bound states on the shot noise in normal metal–low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential
Chen Wen-Xiang, Wang Rui-Qiang, Hu Liang-Bin †
       

The ratio of the noise power to the charge current in a 1D tunnel junction (a) and in a 2D tunnel junction (b) as a function of the bias voltage for several different strengths of the Zeeman magnetic field. The values of B0 shown in the figures are given in units of the critical field strength Bc. The other parameters are Δ / μ s = 0.001 , α = 0.2 , and Z 0 = 5 .