Effects of interface bound states on the shot noise in normal metal–low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential
Chen Wen-Xiang, Wang Rui-Qiang, Hu Liang-Bin †
       

Illustration of the shift of the midgap conductance peak in the differential tunneling conductance spectrum in a 1D tunnel junction (a) and in a 2D tunnel junction (b) as the strength of the Zeeman magnetic field is increased from B 0 = 0 to B 0 = B c . The values of B0 shown in the figures are given in units of the critical field strength Bc. The other parameters are Δ / μ s = 0.001 , α = 0.2 , and Z 0 = 5 .