Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

Yu Ding^{1, 2}, Shen Guiying¹, Xie Hui¹, Liu Jingming¹, Sun Jing^{1, 2}, Zhao Youwen^{1, 3, †}

PL spectra of undoped and Te-doped GaSb samples measured at 10 K. The undoped GaSb sample is p-type. The net carrier concentrations of the Te-doped GaSb samples listed on the left are measured at room temperature. The same emission peaks of different PL curves are linked by dotted lines.