Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

Yu Ding^{1, 2}, Shen Guiying¹, Xie Hui¹, Liu Jingming¹, Sun Jing^{1, 2}, Zhao Youwen^{1, 3, †}

Carrier concentration as a function of Te concentration. Triangles: data gained from the GDMS and Hall effect measurements. Squares: data gained from Te concentration calculation and Hall effect measurements, straight line: data linear fitted by Eq. (1), dashed line: data linear fitted by Eq. (3), dotted line: best fit curve for data gained from the GDMS and Hall effect measurements.