Epitaxial fabrication of two-dimensional TiTe2 monolayer on Au(111) substrate with Te as buffer layer
Song Zhipeng1, Lei Bao1, Cao Yun1, Qi Jing1, Peng Hao1, Wang Qin1, Huang Li1, Lu Hongliang1, ‡, Lin Xiao1, 2, Wang Ye-Liang1, 3, Du Shixuan1, 2, Gao Hong-Jun1, 2
       

STM images of the 2D TiTe2 layer formed on the Au(111) surface. (a) STM image showing the three domains, marked as α, β, and γ. (b)–(d) Zoom-in STM images of the α, β, and γ domains in (a). (e)–(g) Line profiles of the purple lines in (b)–(d), respectively, which show periods of 5.0 Å, in agreement with 3 times of the Au substrate lattice constant. The sample bias and tunneling current: −10 mV, 40 pA in (a), −0.5 V, 50 pA in (b), −50 mV, 40 pA in (c) and (d).