Low-temperature growth of large-scale, single-crystalline graphene on Ir(111)
Guo Hui1, Chen Hui1, Que Yande1, Zheng Qi1, Zhang Yu-Yang1, 2, Bao Li-Hong1, Huang Li1, Wang Ye-Liang1, Du Shi-Xuan1, 2, †, Gao Hong-Jun1, 2
       

Single-crystalline graphene transferred onto a SiO2 substrate. (a) An optical image of the transferred graphene, showing the continuous graphene film with a few contaminations. (b) Raman spectrum of the transferred graphene on SiO2. The full width at half maximum is smaller than 30 cm−1. (c) Raman mapping ( 15 μ m × 15 μ m ) for the intensity ratio of D band to G band (ID/IG). (d) Source–drain current Ids versus back-gate voltage Vbg at room temperature. The inset is the optical image of the FET.