Low-temperature growth of large-scale, single-crystalline graphene on Ir(111)

Guo Hui¹, Chen Hui¹, Que Yande¹, Zheng Qi¹, Zhang Yu-Yang^{1, 2}, Bao Li-Hong¹, Huang Li¹, Wang Ye-Liang¹, Du Shi-Xuan^{1, 2, †}, Gao Hong-Jun^{1, 2}

Fabrication process of large-scale, single-crystalline graphene on Ir(111). (a) Epitaxial polycrystalline graphene on Ir(111). (b) Remaining R0 graphene islands after post-treatment in an oxygen atmosphere. (c) R0 graphene monolayer on Ir(111) after additional graphene growth cycle. (d)–(f) LEED patterns (68 eV) of the sample at (a)–(c) stages, respectively. Diffraction spots contributed from R0 graphene, Ir, and misaligned graphene (diffraction ring) are labeled.